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FSPJ260F

Features: • 55A, 200V, rDS(ON) = 0.032• UIS Rated• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)- Rated to 300K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdow...

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FSPJ260F: Features: • 55A, 200V, rDS(ON) = 0.032• UIS Rated• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)- Rated to 300K RAD (Si)• Single Event- Safe Operating Area Curve ...

FSPJ260F Data Sheet

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Part Number:
FSPJ260F
Supply Ability:
5000

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Product Details

Description



Features:

• 55A, 200V, rDS(ON) = 0.032
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
• Photo Current
- 17nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2


Specifications

Drain to Source Voltage VDS 200 V
Drain to Gate Voltage (RGS = 20W) VDGR 200 V
Continuous Drain Current
TC = 25oC		 ID 55 A
TC = 100oC. ID 35 A
Pulsed Drain Current IDM 200 A
Pulsed Drain Current VGS ±30 V
Maximum Power Dissipation
TC = 25oC		 PT 192 W
TC = 100oC PT 77 W
Linear Derating Factor   1.54 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) IAS 110 A
Continuous Source Current (Body Diode) IS 55 A
Pulsed Source Current (Body Diode) ISM 200 A
Operating and Storage Temperature TJ, TSTG -55 to 150
Lead Temperature (During Soldering) TL 300
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)		   9.3 (Typical) g



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