FSJ9160R Selling Leads, Price trend, FSJ9160R DataSheet download, circuit diagram from SeekIC.com

Features: • 44A, -100V, rDS(ON) = 0.055• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Rat...

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SeekIC No. : 004344451 Detail

FSJ9160R: Features: • 44A, -100V, rDS(ON) = 0.055• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity f...

FSJ9160R Data Sheet

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Part Number:: FSJ9160R
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

• 44A, -100V, r_DS(ON) = 0.055
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with V_DS up to 80% of Rated Breakdown and V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 10.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²

Specifications

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS -100 V
Drain to Gate Voltage (R_GS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR -100 V
Continuous Drain Current
T_C= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D 44 A
T_C= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D 28 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM 132 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS ±20 V
Maximum Power Dissipation
T_C = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T 192 W
T_C = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T77 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure). . . . . . . . . . . . I_AS 132 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_S 44 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . I_SM 132 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L300 oC
(Distance >0.063in (1.6mm) from Case, 10s Max)

Description

The Discrete Products Operation of Intersil Corporation FSJ9160R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular,is combined with 100K RADS of total dose hardness to provide devices, FSJ9160R is ideally suited to harsh space environments.The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs FSJ9160R includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.

This MOSFET FSJ9160R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.FSJ9160R is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation,switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSJ9160R can be operated directly from integrated circuits.

Reliability screening FSJ9160R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

FSJ9160R

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