FSJ9055D Selling Leads, Price trend, FSJ9055D DataSheet download, circuit diagram from SeekIC.com

Features: • 55A, -60V, rDS(ON) = 0.029• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Rate...

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SeekIC No. : 004344448 Detail

FSJ9055D: Features: • 55A, -60V, rDS(ON) = 0.029• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity fo...

FSJ9055D Data Sheet

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Part Number:: FSJ9055D
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Description

Features:

• 55A, -60V, r_DS(ON) = 0.029
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with V_DS up to 80% of Rated Breakdown and V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²

Specifications

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS -60 V
Drain to Gate Voltage (R_GS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . V_DGR-60 V
Continuous Drain Current
T_C= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . I_D 55 A
T_C= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . I_D 35 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . I_DM 165 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .V_GS ±20 V
Maximum Power Dissipation
T_C = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . P_T125 W
T_C = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . P_T50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure). . . . . . . . . . . . . . I_AS 165 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_S 55 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . I_SM 165 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . T_L 300 oC

Description

The Discrete Products Operation of Harris Semiconductor FSJ9055D has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices, FSJ9055D is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Harris portfolio of SEGR resistant radiation hardened MOSFETs FSJ9055D includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.

This MOSFET FSJ9055D is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation,switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSJ9055D can be operated directly from integrated circuits.

Reliability screening FSJ9055D is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet.

FSJ9055D

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