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FSJ9055R

Features: • 55A, -60V, rDS(ON) = 0.029• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Rate...

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SeekIC No. : 004344449 Detail

FSJ9055R: Features: • 55A, -60V, rDS(ON) = 0.029• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity fo...

FSJ9055R Data Sheet

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Part Number:
FSJ9055R
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 55A, -60V, rDS(ON) = 0.029
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2


Specifications

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -60 V
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . VDGR -60 V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . ID 55 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . ID 35 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . IDM 165 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .VGS ±20 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . PT 125 W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . PT 50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . 1.20 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure). . . . . . . . . . . . . . IAS 165 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 55 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . ISM 165 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... . . . TL 300 oC



Description

The Discrete Products Operation of Harris Semiconductor FSJ9055R has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide, FSJ9055R is ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Harris portfolio of SEGR resistant radiation hardened MOSFETs FSJ9055R includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.Numerous packaging options are also available.

This MOSFET FSJ9055R is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation,switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. FSJ9055R can be operated directly from integrated circuits.

Reliability screening FSJ9055R is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet.




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