Position: Home  > All Categories> Integrated Circuits (ICs) > FQU2P25

FQU2P25

Features: • -2.0A, -250V, RDS(on) = 4.0Ω @VGS = -10 V• Low gate charge ( typical 6.5 nC)• Low Crss ( typical 6.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD2P25 / FQU2P25 Units VDSS D...

product image

FQU2P25 Picture
See larger image
SeekIC No. : 004343375 Detail

FQU2P25: Features: • -2.0A, -250V, RDS(on) = 4.0Ω @VGS = -10 V• Low gate charge ( typical 6.5 nC)• Low Crss ( typical 6.5 pF)• Fast switching• 100% avalanche tested•...

FQU2P25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQU2P25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -2.0A, -250V, RDS(on) = 4.0Ω @VGS = -10 V
• Low gate charge ( typical  6.5 nC)
• Low Crss ( typical  6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD2P25 / FQU2P25 Units
VDSS Drain-Source Voltage -250 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 -2.0 A
-1.27 A
IDM Drain Current - Pulsed (Note 1) -8.0 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ
IAR Avalanche Current (Note 1) -2.0 A
EAR Repetitive Avalanche Energy (Note 1) 3.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 37 W
0.29 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These P-Channel enhancement mode power field effect transistors of FQU2P25 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU2P25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU2P25 is well suited for high efficiency switching DC/DC converters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Isolators
HCPL062N
HCPL316J
Discrete Semiconductor Products
T508N12TOF
MUR20040
Audio Products
HUC1002
WM-64CT
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more