Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical 35 pF)Fast switching100% avalanche testedImproved dv/dt capability150 C maximum junction temperature ratingLow level gate drive requirements allowing directoperation form logic driversBuilt-in ESD Pro...
FQU20N06LE: Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical 35 pF)Fast switching100% avalanche testedImproved dv/dt capability150 C maximum junction temperature...
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17.2A, 60V, RDS(on)= 0.06 @ VGS= 10V
Low gate charge ( typical 9.5 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
150 C maximum junction temperature rating
Low level gate drive requirements allowing directoperation form logic drivers
Built-in ESD Protection Diode
Symbol |
Parameter |
FQD13N06/FQU13N06 |
Units |
VDSS |
Drain-Source Voltage |
60 |
V |
ID |
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100) |
17.2 |
A |
10.9 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
68.8 |
A |
VGSS |
Gate-Source Voltage |
±20 |
V |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
170 |
mJ |
IAR |
Avalanche Current (Note 1) |
17.2 |
A |
EAR |
Repetitive Avalanche Energy (Note 1) |
3.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
PD |
Power Dissipation (TA = 25) * |
2.5 |
W |
Power Dissipation (TC = 25)
- Derate above 25 |
38 |
W | |
0.30 |
W/ | ||
TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
TL |
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effecttransistors of FQU20N06LE are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQU20N06LE has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. FQU20N06LE is wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.