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FQU20N06L

Features: • 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V• Low gate charge ( typical 9.5 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 150oC maximum junction temperature rating• Low level gate drive requir...

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SeekIC No. : 004343367 Detail

FQU20N06L: Features: • 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V• Low gate charge ( typical 9.5 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Improved ...

FQU20N06L Data Sheet

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Part Number:
FQU20N06L
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• Low level gate drive requirements allowing direct operation form logic drivers


Specifications

IS

Maximum Continuous Drain-Source Diode Forward Current

-

-

17.2

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

-

--

68.8

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 17.2A

-

-

1.5

V

trr

Reverse Recovery Time

VGS = 0 V, IF = 21 A,

dIF / dt = 100 A/ìs (Note 4)

-

-

-

ns

Qrr

Reverse Recovery Charge

-

54

-

nC




Description

These N-Channel enhancement mode power field effect transistors of FQU20N06L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology of FQU20N06L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU20N06L is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.




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