MOSFET 60V N-Channel QFET
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Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 16.8 A | ||
Resistance Drain-Source RDS (on) : | 0.063 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | FQU20N06TU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 16.8A |
Rds On (Max) @ Id, Vgs | 63 mOhm @ 8.4A, 10V |
Input Capacitance (Ciss) @ Vds | 590pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 15nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQU20N06TU FQU20N06TU |