FQU20N06TU

MOSFET 60V N-Channel QFET

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SeekIC No. : 00161437 Detail

FQU20N06TU: MOSFET 60V N-Channel QFET

floor Price/Ceiling Price

Part Number:
FQU20N06TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 16.8 A
Resistance Drain-Source RDS (on) : 0.063 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.063 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 16.8 A


Parameters:

Technical/Catalog InformationFQU20N06TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C16.8A
Rds On (Max) @ Id, Vgs63 mOhm @ 8.4A, 10V
Input Capacitance (Ciss) @ Vds 590pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU20N06TU
FQU20N06TU



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