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FQU2N60TU

MOSFET 600V N-Channel QFET

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SeekIC No. : 00151531 Detail

FQU2N60TU: MOSFET 600V N-Channel QFET

FQU2N60TU Data Sheet

floor Price/Ceiling Price

US $ .37~.71 / Piece | Get Latest Price
Part Number:
FQU2N60TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.71
  • $.63
  • $.52
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 4.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 4.7 Ohms


Parameters:

Technical/Catalog InformationFQU2N60TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs4.7 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs11nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU2N60TU
FQU2N60TU



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