FQU2N60

Symbol

Parameter

FQD5N60C/FQU5N60C

Units

VDSS

Drain-Source Voltage

600

V

ID

Drain Current

- Continuous (TC =25°C)

2.0

A

- Continuous (TC = 100°C)

1.26

A

IDM

Drain Current Pulsed                     (Note 1)

8.0

A

VGSS

Gate-Source Voltage

± 30

V

EAS

Single Pulsed Avalanche Energy            (Note 2)

140

mJ

IAR

Avalanche Current                         (Note 1)

2.0

A

EAR

Repetitive Avalanche Energy                (Note 1)

4.5

mJ

dv/dt

Peak Diode Recovery dv/dt                  (Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

45
0.35

W
W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300

°C