FQU2N50BTU_WS, US $ .19-.21 , Fairchild Semiconductor, FQU2N50BTU_WS DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158771 Detail

FQU2N50BTU_WS: MOSFET Power MOSFET

FQU2N50BTU_WS Data Sheet

US $ .19~.21 / Piece | Get Latest Price

Part Number:: FQU2N50BTU_WS
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1.6 A
Resistance Drain-Source RDS (on) :	5.3 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 5.3 Ohms

Parameters:

Technical/Catalog Information	FQU2N50BTU_WS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	1.6A
Rds On (Max) @ Id, Vgs	5.3 Ohm @ 800mA , 10V
Input Capacitance (Ciss) @ Vds	230pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU2N50BTU_WS FQU2N50BTU_WS

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FQU2N50BTU_WS

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