FQU2N100

Symbol

Parameter

FQD2N100/FQU2N100

Units

V_DSS

Drain-Source Voltage

1000

V

I_D

Drain Current

- Continuous (TC =25°C)

1.6

A

- Continuous (TC = 100°C)

1.0

A

I_DM

Drain Current Pulsed (Note 1)

6.4

A

V_GSS

Gate-Source Voltage

±30

V

E_AS

Single Pulsed Avalanche Energy (Note 2)

160

mJ

I_AR

Avalanche Current (Note 1)

1.6

A

E_AR

Repetitive Avalanche Energy (Note 1)

5.0

mJ

d _v/dt

Peak Diode Recovery dv/dt (Note 3)

5.5

V/ns

P_D

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)

50

W

- Derate above 25°C

0.4

W/°C

T_{J, TSTG}

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C