Features: • 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 50 pF)•Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD24N08 /FQU24N08 Units VDSS Drain...
FQU24N08: Features: • 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 50 pF)•Fast switching• 100% avalanche tested• Impr...
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Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical ...
Symbol | Parameter | FQD24N08 /FQU24N08 | Units |
VDSS | Drain-Source Voltage | 80 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
19.6 | A |
12.4 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 78.4 | A |
VGSS | Gate-Source Voltage | ±25 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 230 | mJ |
IAR | Avalanche Current (Note 1) | 19.6 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 5.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
PD | Power Dissipation (TA = 25) * | 2.5 | W |
Power Dissipation (TC = 25) - Derate above 25 |
50 | W | |
0.4 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effect transistors of FQU24N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology of FQU24N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQU24N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.