FQU1P50

Symbol

Parameter

FQD1P50 / FQU1P500

Units

V_DSS

Drain-Source Voltage

-500

V

I_D

Drain Current

- Continuous (TC = 100°C)

-1.2

A

- Continuous (TC = 25°C)

-0.76

A

I_DM

Drain Current Pulsed                     (Note 1)

-4.8

A

V_GSS

Gate-Source Voltage

± 30

V

E_AS

Single Pulsed Avalanche Energy            (Note 2)

110

mJ

I_AR

Avalanche Current                         (Note 1)

-1.2

A

E_AR

Repetitive Avalanche Energy                (Note 1)

3.8

mJ

d _v/dt

Peak Diode Recovery dv/dt                  (Note 3)

-4.5

V/ns

P_D

T_{J, TSTG}

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

38

W
W/°C

0.3

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300

°C