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FQU1N80TU

MOSFET 800V Single

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SeekIC No. : 00162345 Detail

FQU1N80TU: MOSFET 800V Single

FQU1N80TU Data Sheet

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Part Number:
FQU1N80TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 20 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 20 Ohms


Parameters:

Technical/Catalog InformationFQU1N80TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 195pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs7.2nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU1N80TU
FQU1N80TU



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