FQU1N60TU Selling Leads, Price trend , Fairchild Semiconductor, FQU1N60TU DataSheet download, circuit diagram from SeekIC.com

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FQU1N60TU: MOSFET

FQU1N60TU Data Sheet

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Part Number:: FQU1N60TU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/30

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MOSFET N-CH/200V/10A/QFET
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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1 A
Resistance Drain-Source RDS (on) :	11.5 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11.5 Ohms

Parameters:

Technical/Catalog Information	FQU1N60TU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	11.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	150pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	6nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU1N60TU FQU1N60TU

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FQU1N60TU

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