FQU1N50B

Symbol

Parameter

FQD1N50 / FQU1N50

Units

V_DSS

Drain-Source Voltage

500

V

I_D

Drain Current

- Continuous (TC = 100°C)

1.1

A

- Continuous (TC = 25°C)

0.7

A

I_DM

Drain Current Pulsed                     (Note 1)

4.4

A

V_GSS

Gate-Source Voltage

± 30

V

E_AS

Single Pulsed Avalanche Energy            (Note 2)

80

mJ

I_AR

Avalanche Current                         (Note 1)

1.1

A

E_AR

Repetitive Avalanche Energy                (Note 1)

2.5

mJ

d _v/dt

Peak Diode Recovery dv/dt                  (Note 3)

4.5

V/ns

P_D

T_{J, TSTG}

Power Dissipation (TA = 25°C)

2.5

W

Power Dissipation (TC = 25°C)
- Derate above 25°C

25

W
W/°C

0.2

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300

°C