FQU17N08

Features: • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD17N08 /FQU17N08 Units VDSS Dra...

product image

FQU17N08 Picture
SeekIC No. : 004343355 Detail

FQU17N08: Features: • 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche tested• Im...

floor Price/Ceiling Price

Part Number:
FQU17N08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical  28 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter FQD17N08 /FQU17N08 Units
VDSS Drain-Source Voltage 80 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
12.9 A
8.2 A
IDM Drain Current - Pulsed (Note 1) 51.6 A
VGSS Gate-Source Voltage ±25 V
EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ
IAR Avalanche Current (Note 1) 12.9 A
EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25
44 W
0.32 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
300  



Description

    These N-Channel enhancement mode power field effect transistors of FQU17N08 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology of FQU17N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQU17N08 is well suited for low voltage applications such as automotive,high  efficiency switching for DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Boxes, Enclosures, Racks
Soldering, Desoldering, Rework Products
Fans, Thermal Management
LED Products
View more