FQU13N10TU

MOSFET 100V N-Ch QFET Logic Level

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SeekIC No. : 00161539 Detail

FQU13N10TU: MOSFET 100V N-Ch QFET Logic Level

floor Price/Ceiling Price

Part Number:
FQU13N10TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationFQU13N10TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs180 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU13N10TU
FQU13N10TU



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