FQU13N10LTU, US $ .25-.37 , Fairchild Semiconductor, FQU13N10LTU DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00145833 Detail

FQU13N10LTU: MOSFET 100V N-Ch QFET Logic Level

FQU13N10LTU Data Sheet

US $ .25~.37 / Piece | Get Latest Price

Part Number:: FQU13N10LTU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/28

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	10 A
Resistance Drain-Source RDS (on) :	0.18 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.18 Ohms

Parameters:

Technical/Catalog Information	FQU13N10LTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	180 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	520pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	12nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQU13N10LTU FQU13N10LTU

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