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FQU13N06LTU_WS

MOSFET 60V N-Channel QFET

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SeekIC No. : 00166813 Detail

FQU13N06LTU_WS: MOSFET 60V N-Channel QFET

FQU13N06LTU_WS Data Sheet

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Part Number:
FQU13N06LTU_WS
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.115 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.115 Ohms


Parameters:

Technical/Catalog InformationFQU13N06LTU_WS
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs115 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs6.4nC @ 5V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU13N06LTU_WS
FQU13N06LTU_WS



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