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FQU11P06TU

MOSFET 60V P-Channel QFET

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SeekIC No. : 00146885 Detail

FQU11P06TU: MOSFET 60V P-Channel QFET

FQU11P06TU Data Sheet

floor Price/Ceiling Price

US $ .27~.4 / Piece | Get Latest Price
Part Number:
FQU11P06TU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
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  • $.35
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  • $.27
  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 9.4 A
Resistance Drain-Source RDS (on) : 0.185 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Resistance Drain-Source RDS (on) : 0.185 Ohms
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 60 V
Package / Case : IPAK
Continuous Drain Current : - 9.4 A


Parameters:

Technical/Catalog InformationFQU11P06TU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C9.4A
Rds On (Max) @ Id, Vgs185 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQU11P06TU
FQU11P06TU



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