Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.53 Ohms
Continuous Drain Current
: 8 A
Drain-Source Breakdown Voltage
: - 100 V
Features: • -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature ratingSpecifications
|
Symbol |
Parameter |
FQP8P10 |
Units |
|
VDSS |
Drain-Source Voltage |
-100 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-8.0 |
A |
|
-5.7 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-32 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
150 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-8.0 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
6.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
65 |
W
|
|
0.43 |
W/ |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese P-Channel enhancement mode power field effect transistors of FQP8P10 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQP8P10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP8P10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQP8P10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 530 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 470pF @ 25V |
| Power - Max | 65W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP8P10
FQP8P10
|
FQP8P10 Data Sheet
