Features: • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQP8N25 Units VDSS Dra...
FQP8N25: Features: • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Imp...
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Symbol |
Parameter |
FQP8N25 |
Units |
VDSS |
Drain-Source Voltage |
250 |
V |
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
8.0 |
A |
5.0 |
A | ||
IDM |
Drain Current - Pulsed (Note 1) |
32 |
A |
VGSS |
Gate-Source Voltage |
± 30 |
V |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
120 |
mJ |
IAR |
Avalanche Current (Note 1) |
8.0 |
A |
EAR |
Repetitive Avalanche Energy (Note 1) |
8.7 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
87 |
W
|
0.69 |
W/ | ||
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQP8N25 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQP8N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP8N25 is well suited for high efficiency switching DC/DC converters,switch mode power supply.