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FQP8N60C_Q

MOSFET 600V N-Ch Q-FET advance C-Series

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SeekIC No. : 00164629 Detail

FQP8N60C_Q: MOSFET 600V N-Ch Q-FET advance C-Series

FQP8N60C_Q Data Sheet

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Part Number:
FQP8N60C_Q
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 7.5 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 7.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


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