FQP85N06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 85 A
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

• 85A, 60V, R_DS(on) = 0.010 @V_GS = 10 V
• Low gate charge ( typical 86 nC)
• Low Crss ( typical 165 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP85N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	85	A
		60	A
IDM	Drain Current - Pulsed (Note 1)	300	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	810	mJ
IAR	Avalanche Current (Note 1)	85	A
EAR	Repetitive Avalanche Energy (Note 1)	16.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	160	W
		1.07	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 130H, I_AS = 85A, V_DD = 25V, R_G = 25 , Starting T_J = 25°C
3. I_SD 85A, di/dt 300A/s, V_DD BV_DSS, Starting T_J = 25°C


Description

These N-Channel enhancement mode power field effect transistors of FQP85N06 are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP85N06 is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Parameters:

Technical/Catalog Information	FQP85N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	85A
Rds On (Max) @ Id, Vgs	10 mOhm @ 42.5A, 10V
Input Capacitance (Ciss) @ Vds	4120pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	112nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP85N06 FQP85N06