MOSFET 900V N-Ch Q-FET advance C-Series
FQA6N90C_F109: MOSFET 900V N-Ch Q-FET advance C-Series
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 2.3 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3PN | Packaging : | Tube |
Technical/Catalog Information | FQA6N90C_F109 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 3A, 10V |
Input Capacitance (Ciss) @ Vds | 1770pF @ 25V |
Power - Max | 198W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 40nC @ 10V |
Package / Case | TO-3PN |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQA6N90C_F109 FQA6N90C_F109 |