FQA6N90C_F109, US $ .95-1.46 , Fairchild Semiconductor, FQA6N90C_F109 DataSheet download, circuit diagram from SeekIC.com

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FQA6N90C_F109: MOSFET 900V N-Ch Q-FET advance C-Series

FQA6N90C_F109 Data Sheet

US $ .95~1.46 / Piece | Get Latest Price

Part Number:: FQA6N90C_F109
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/25

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Recent History
What is this?

FQA62N25C evaluate
US $2.27 - 3.47 / Piece

MOSFET 250V N-Channel Adv Q-FET C-Series
FQA65N06 evaluate
MOSFET N-CH/60V/72A/0.016OHM
FQA65N20 evaluate
US $1.68 - 2.46 / Piece

MOSFET 200V N-Channel QFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	6 A
Resistance Drain-Source RDS (on) :	2.3 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3PN	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 2.3 Ohms

Parameters:

Technical/Catalog Information	FQA6N90C_F109
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	2.3 Ohm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	1770pF @ 25V
Power - Max	198W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA6N90C_F109 FQA6N90C_F109

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FQA6N90C_F109

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