FQA65N06

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 72 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

• 72A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQA65N06	Units
VDSS	Drain-Source Voltage	60	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	72	A
		51	A
IDM	Drain Current - Pulsed (Note 1)	288	A
VGSS	Gate-Source Voltage	±25	V
EAS	Single Pulsed Avalanche Energy (Note 2)	665	mJ
IAR	Avalanche Current (Note 1)	72	A
EAR	Repetitive Avalanche Energy (Note 1)	18.3	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	183	W
		1.22	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+175	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQA65N06 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQA65N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA65N06 is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Parameters:

Technical/Catalog Information	FQA65N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	72A
Rds On (Max) @ Id, Vgs	16 mOhm @ 36A, 10V
Input Capacitance (Ciss) @ Vds	2410pF @ 25V
Power - Max	183W
Packaging	Tube
Gate Charge (Qg) @ Vgs	65nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA65N06 FQA65N06