FQA65N20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.032 Ohms
Continuous Drain Current : 65 A


Features:

• 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V
• Low gate charge ( typical 170 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	FQA65N20	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	65	A
		41	A
IDM	Drain Current - Pulsed (Note 1)	260	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	1010	mJ
IAR	Avalanche Current (Note 1)	65	A
EAR	Repetitive Avalanche Energy (Note 1)	31	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C	310	W
		2.5	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQA65N20 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQA65N20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA65N20 is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.

Parameters:

Technical/Catalog Information	FQA65N20
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	32 mOhm @ 32.5A, 10V
Input Capacitance (Ciss) @ Vds	7900pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA65N20 FQA65N20