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FQA6N80_F109

MOSFET 800V N-Channel QFET

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SeekIC No. : 00161506 Detail

FQA6N80_F109: MOSFET 800V N-Channel QFET

FQA6N80_F109 Data Sheet

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Part Number:
FQA6N80_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.3 A
Resistance Drain-Source RDS (on) : 1.95 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1.95 Ohms


Parameters:

Technical/Catalog InformationFQA6N80_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C6.3A
Rds On (Max) @ Id, Vgs1.95 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max185W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA6N80_F109
FQA6N80_F109



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