FQA6N80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 1.95 Ohms


Features:

* 6.3A, 800V, R_DS(on)  =  1.95  @V_GS  = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical  14 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability 


Specifications

Symbol	Parameter	FQA10N80	Units
VDSS	Drain-Source Voltage	800	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	6.3	A
		4.0	A
IDM	Drain Current - Pulsed             (Note 1)	25.2	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	680	mJ
IAR	Avalanche Current                   (Note 1)	6.3	A
EAR	Repetitive Avalanche Energy         (Note 1)	18.5	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.0	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	185	W
		1.47	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

   These N-Channel enhancement mode power FQA6N80 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQA6N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQA6N80 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.


Parameters:

Technical/Catalog Information	FQA6N80
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	6.3A
Rds On (Max) @ Id, Vgs	1.95 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds	1500pF @ 25V
Power - Max	185W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA6N80 FQA6N80