FPD7612

¹TAmbient = 22°C unless otherwise noted ²Max. RF Input Limit must be further limited if input V_SWR > 2.5:1
³Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: P_TOT (P_DC + P_IN) P_OUT, where
                                                   P_DC: DC Bias Power
                                                   P_IN: RF Input Power
                                                   P_OUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
                                                   P_TOT= 500mW (3.6mW/°C) x T_HS
where THS = heatsink or ambient temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 85°C heatsink temperature: P_TOT = 0.5W (0.0036 x (85 22)) = 0.27W
Note on Thermal Resistivity: The nominal value of 12°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source flange.

The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),featuring a 0.25 m by 200 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable mediumpower applications. The FPD7612 also features Si3N4 passivation and is available in a low cost plastic package.

FPD7612 applications include commercial and other narrowband and broadband high-performance amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters.