IGBT Transistors 600V N-Channel IGBT SMPS II Series
FGB40N6S2T: IGBT Transistors 600V N-Channel IGBT SMPS II Series
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 75 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 290 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-263AB-3 | Packaging : | Reel |