IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2
FGB40N60SM: IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 80 A | Gate-Emitter Leakage Current : | +/- 400 nA | ||
Power Dissipation : | 349 W | Maximum Operating Temperature : | + 175 C | ||
Package / Case : | TO-263AB (D2 PAK) | Packaging : | Reel |