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FGB40N6S2

IGBT Transistors Sgl 600V N-Ch

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SeekIC No. : 00143833 Detail

FGB40N6S2: IGBT Transistors Sgl 600V N-Ch

FGB40N6S2 Data Sheet

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Part Number:
FGB40N6S2
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 75 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 290 W Maximum Operating Temperature : + 150 C
Package / Case : TO-263AB-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Gate-Emitter Leakage Current : +/- 250 nA
Continuous Collector Current at 25 C : 75 A
Package / Case : TO-263AB-3
Power Dissipation : 290 W


Parameters:

Technical/Catalog InformationFGB40N6S2
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A
Power - Max290W
Mounting TypeSurface Mount
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGB40N6S2
FGB40N6S2



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