IGBT Transistors 25A/1200V/NPT
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SpecificationsProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage Drawin...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Maximum Gate Emitter Voltage : | +/- 20 V | Power Dissipation : | 310 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3P-3 |
Packaging : | Tube |