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FGA180N33ATTU

IGBT Transistors 330V 180A PDP Trench

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SeekIC No. : 00143158 Detail

FGA180N33ATTU: IGBT Transistors 330V 180A PDP Trench

FGA180N33ATTU Data Sheet

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Part Number:
FGA180N33ATTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 330 V
Maximum Gate Emitter Voltage : +/- 30 V Maximum Operating Temperature : + 150 C
Package / Case : TO-3PN-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 30 V
Collector- Emitter Voltage VCEO Max : 330 V
Package / Case : TO-3PN-3


Parameters:

Technical/Catalog InformationFGA180N33ATTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)330V
Current - Collector (Ic) (Max)180A
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 40A
Power - Max390W
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGA180N33ATTU
FGA180N33ATTU



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