IGBT Transistors 300V PDP IGBT
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A...
Features: • NPT Trench Technology, Positive temperature coefficient• Low saturation vo...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 300 V |
Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 30 V |
Gate-Emitter Leakage Current : | +/- 250 nA | Power Dissipation : | 290 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3P-3 |
Packaging : | Tube |