IGBT Transistors NPT IGBT
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A...
Features: • NPT Trench Technology, Positive temperature coefficient• Low saturation vo...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Collector-Emitter Saturation Voltage : | 2.4 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 24 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 200 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3P-3 | Packaging : | Tube |
Technical/Catalog Information | FGA15N120ANDTU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 24A |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
Power - Max | 200W |
Mounting Type | Through Hole |
Package / Case | TO-3P |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGA15N120ANDTU FGA15N120ANDTU |