IGBT Transistors 1200V NPT Trench
FGA15N120ANTDTU_F109: IGBT Transistors 1200V NPT Trench
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Features: • High speed switching• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-3PN-3 | Packaging : | Tube |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FGA15N120ANTDTU_F109 | Full Production | RoHS Compliant | $2.66 | TO-3PN | 3 | RAIL | N/A | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FGA15N120 Line 3: ANTD |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FGA15N120ANTDTU_F109 is available. Click here for more information . |
Using Fairchild's proprietary trench design and advanced NPTtechnology, the 1200V NPT IGBT FGA15N120ANTDTU_F109 offers superior conductionand switching performances, high avalanche ruggedness andeasy parallel operation.
This device FGA15N120ANTDTU_F109 is well suited for the resonant or soft switching applicationsuch as induction heating, microwave oven, etc.
Technical/Catalog Information | FGA15N120ANTDTU_F109 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 30A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 15A |
Power - Max | 186W |
Mounting Type | Through Hole |
Package / Case | TO-3P |
Packaging | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGA15N120ANTDTU_F109 FGA15N120ANTDTU_F109 |