FDZ2553N

MOSFET 20V/12V NCh MOSFET

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SeekIC No. : 00151500 Detail

FDZ2553N: MOSFET 20V/12V NCh MOSFET

floor Price/Ceiling Price

US $ .5~.98 / Piece | Get Latest Price
Part Number:
FDZ2553N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Upload time: 2025/1/2

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 9.6 A
Resistance Drain-Source RDS (on) : 0.014 Ohms Configuration : Dual Common Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : BGA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 0.014 Ohms
Configuration : Dual Common Drain
Continuous Drain Current : 9.6 A
Package / Case : BGA


Features:

*  9.6 A, 20 V.  RDS(ON) =  14 m @ VGS = 4.5 V   RDS(ON) =  20 m @ VGS = 2.5 V

*  Occupies only 0.10 cm 2 of PCB area: 1/3 the area of SO-8.
*  Ultra-thin package:  less than 0.80 mm height when mounted to PCB.
*  Outstanding thermal transfer characteristics: significantly better than SO-8.
*  Ultra-low Qg x RDS(ON) figure-of-merit
*  High power and current handling capability




Application

*  Battery management 
*  Load switch
*  Battery protection



Specifications

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID

Drain Current Continuous (Note 1a)
Pulsed

9.6

A

20

PD

Power Dissipation (Steady State) (Note 1a)

2.1

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C




Description

Combining  Fairchild's  advanced  2.5V  specified PowerTrench  process  with  state-of-the-art  BGA packaging, the FDZ2553N minimizes both PCB space and  RDS(ON).  This  Monolithic  Common  Drain  BGA MOSFET  embodies  a  breakthrough  in  packaging technology  which  enables  the  device  to  combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON) .  




Parameters:

Technical/Catalog InformationFDZ2553N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C9.6A
Rds On (Max) @ Id, Vgs14 mOhm @ 9.6A, 4.5V
Input Capacitance (Ciss) @ Vds 1299pF @ 10V
Power - Max2.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 4.5V
Package / CaseBGA
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDZ2553N
FDZ2553N



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