FDZ2552P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Dual Common Drain
Resistance Drain-Source RDS (on) : 0.045 Ohms
Package / Case : BGA


Features:

6 A, 20 V.  R_DS(ON) = 0.045 @ V_GS = 4.5 V  
                          R_DS(ON) = 0.075 @ V_GS = 2.5 V
Occupies only 0.10 cm²  of PCB area. 1/3 the area of SO-8.
Ultra-thin package: less than 0.70 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: significantly better than SO-8.
Ultra-low Qg x RDS(ON) figure-of-merit. 
High power and current handling capability.


Application

Battery management
Load switch
Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	6	A
		-20
PD	Power Dissipation (Steady State) (Note 1a)	3.0	W
TJ, Tstg	Operating and Storage Junction Temperature Range	55 to +150

Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and R_DS(ON).  This dual BGA MOSFET embodies abreakthrough in packaging technology which enables the device to combine excellent thermal transfe characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low R_DS(ON).