FDZ2551N

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 9 A
Configuration : Dual Common Drain
Resistance Drain-Source RDS (on) : 0.018 Ohms
Package / Case : BGA


Features:

9 A, 20 V.  R_DS(ON) = 0.018 @ V_GS = 4.5 V 
                    R_DS(ON) = 0.030 @ V_GS = 2.5 V.
Occupies only 0.10 cm²  of PCB area. 1/3 the area of SO-8.
Ultra-thin package: less than 0.70 mm height when mounted to PCB.
Outstanding thermal transfer characteristics: significantly better than SO-8.
Ultra-low Qg x RDS(ON) figure-of-merit.
High power and current handling capability.


Application

Battery management
Load switch
Battery protection


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	9	A
		20
PD	Power Dissipation (Steady State) (Note 1a)	3	W
TJ, Tstg	Operating and Storage Junction Temperature Range	55 to +150

Description

Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2551N minimizes both PCB space and R_DS(ON).  This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low R_DS(ON).