FDW252P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 8.8 A
Package / Case : TSSOP-8
Configuration : Single Triple Drain Quad Source
Resistance Drain-Source RDS (on) : 0.0125 Ohms


Features:

8.8 A,  20 V. R_DS(ON) = 0.012 @ V_GS = 4.5 V
                             R_DS(ON) = 0.018 @ V_GS = 2.5 V
Extended V_GSS range ( ±12V) for battery applications
Low gate charge
High performance trench technology for extremely low R_DS(ON)
Low profile TSSOP-8 package


Application

Load switch
Motor drive
DC/DC conversion
Power management


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	-20	V
VGSS	Gate-Source Voltage	±12	V
ID	Drain Current Continuous (Note 1a) Pulsed	-8.8	A
		-50
PD	Total Power Dissipation (Note 1a) (Note 1b)	1.3	W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150

Description

This FDW252P P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive voltage (2.5V 12V).


Parameters:

Technical/Catalog Information	FDW252P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8.8A
Rds On (Max) @ Id, Vgs	12.5 mOhm @ 8.8A, 4.5V
Input Capacitance (Ciss) @ Vds	5045pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	66nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW252P FDW252P