FDW2521C

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 21 m Ohms
Continuous Drain Current : + 5.5 A, - 3.8 A


Features:

*  Q1:   N-Channel                        
    5.5 A, 20 V.    R_DS(ON) = 21 m @ V_GS = 4.5 V
                          R_DS(ON) = 35 m @ V_GS = 2.5 V
*  Q2:   P-Channel            
   3.8 A, 20 V.   R_DS(ON) = 43 m @ V_GS = 4.5 V
                           R_DS(ON) = 70 m @ V_GS = 2.5 V
*  High performance trench technology for extremely low R_DS(ON) 
*  Low profile TSSOP-8 package

Application

DC/DC conversion
Power management
Load switch


Pinout




Specifications

Symbol	Parameter	Q1	Q2	Units
VDSS	Drain-Source Voltage	20	20	V
VGSS	Gate-Source Voltage	±12	±12	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	5.5	3.8	A
		30	30
PD	Power Dissipation (Note 1a) (Note 1b)	1.0		W
		0.6
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +150		°C

Description

This complementary MOSFET device FDW2521C is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Parameters:

Technical/Catalog Information	FDW2521C
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	5.5A, 3.8A
Rds On (Max) @ Id, Vgs	21 mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1082pF @ 10V
Power - Max	600mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	8-TSSOP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDW2521C FDW2521C