MOSFET PowerTrench
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | + 6 A, - 4.4 A | ||
Resistance Drain-Source RDS (on) : | 18 m Ohms / 35 m Ohms | Configuration : | Dual Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSSOP-8 | Packaging : | Reel |