FDU8880

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 58 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

r_DS(ON)  = 10m , V_GS = 10V, I_D  = 35A
r_DS(ON) = 13m?, VGS = 4.5V, I_D = 35A
High performance trench technology for extremely low r_DS(ON)
Low gate charge
High power and current handling capability


Application

DC/DC converters


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25 C, VGS = 10V) (Note 1)	58	A
	Continuous (TC = 25 C, VGS = 4.5V) (Note 1)	51	A
	Continuous (Tamb = 25 C, VGS = 10V, with RJA = 52 /W)	13	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 2)	53	mJ
PD	Power dissipation	55	W
	Derate above 25	0.37	W/
TJ , TSTG	Operating and Storage Temperature	-55 to 175

Description

This FDU8880 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.  It has been optimized for low gate charge, low r_DS(ON)  and fast switching speed.


Parameters:

Technical/Catalog Information	FDU8880
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	58A
Rds On (Max) @ Id, Vgs	10 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	1260pF @ 15V
Power - Max	55W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU8880 FDU8880