FDU8876

MOSFET 30V 73A 8.2 OHM NCH PWR TRENCH MOSFET

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FDU8876: MOSFET 30V 73A 8.2 OHM NCH PWR TRENCH MOSFET

floor Price/Ceiling Price

US $ .37~.75 / Piece | Get Latest Price
Part Number:
FDU8876
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.75
  • $.56
  • $.47
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 73 A
Resistance Drain-Source RDS (on) : 0.0082 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0082 Ohms
Continuous Drain Current : 73 A
Package / Case : TO-251


Features:

• rDS(ON) = 8.2mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 10mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability



Application

• DC/DC converters


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20

73
66
15
Figure 4
95
70
0.47
-55 to 175
V
V

A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, VGS = 10V) (Note 1)
Continuous (TC = 25°C, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
2.14
100
52
°C/W
°C/W
°C/W



Description

This FDU8876 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDU8876
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C73A
Rds On (Max) @ Id, Vgs8.2 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 15V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU8876
FDU8876



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