FDU8874

MOSFET 30V 116A 5.1OHM NCH PWR TRENCH MOSFET

product image

FDU8874 Picture
SeekIC No. : 00163536 Detail

FDU8874: MOSFET 30V 116A 5.1OHM NCH PWR TRENCH MOSFET

floor Price/Ceiling Price

Part Number:
FDU8874
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 116 A
Resistance Drain-Source RDS (on) : 0.0051 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.0051 Ohms
Package / Case : IPAK
Continuous Drain Current : 116 A


Features:

• rDS(ON)= 5.1mW, VGS = 10V, ID = 35A
• rDS(ON) = 6.4mW, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge
• High power and current handling capability



Application

• DC/DC converters


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20

116
103
18
Figure 4
240
110
0.73
-55 to 175
V
V

A
A
A
A
A
mJ
W
W/°C
°C
ID
Drain Current
Continuous (TC = 25°C, V GS = 10V) (Note 1)
Continuous (TC = 25°C, V GS = 4.5V) (Note 1)
Continuous (Tamb = 25°C, VGS = 10V, with RqJA = 52°C/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 2)
PD
Power dissipation
Derate above 25°C
TJ,TSTG Operating and Storage Temperature

THERMAL CHARACTERISTICS
RJC
RJA
RJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.36
100
52
°C/W
°C/W
°C/W



Description

This FDU8874 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.




Parameters:

Technical/Catalog InformationFDU8874
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C116A
Rds On (Max) @ Id, Vgs5.1 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2990pF @ 15V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU8874
FDU8874



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Industrial Controls, Meters
Hardware, Fasteners, Accessories
Crystals and Oscillators
View more