FDU8796

MOSFET LOW_VOLTAGE

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FDU8796 Picture
SeekIC No. : 00151803 Detail

FDU8796: MOSFET LOW_VOLTAGE

floor Price/Ceiling Price

US $ .27~.41 / Piece | Get Latest Price
Part Number:
FDU8796
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.41
  • $.37
  • $.28
  • $.27
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 4.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 35 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 4.5 m Ohms


Features:

` Max rDS(on) = 5.7m at VGS = 10V, ID = 35A
` Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A
` Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
` Low gate resistance
` Avalanche rated and 100% tested
` RoHS Compliant



Application

· Vcore DC-DC for Desktop Computers and Servers
· VRM for Intermediate Bus Architecture



Specifications

Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current -Continuous (Package Limited)
35
A
-Continuous (Die Limited)
98
-Pulsed 1
305
EAS
Single Pulse Avalanche Energy 2
91
mJ
PD
Power Dissipation
88
W
TJ,TSTG
Operating and Storage Temperature
-55 to 175
°C



Description

This FDU8796 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.




Parameters:

Technical/Catalog InformationFDU8796
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds 2610pF @ 13V
Power - Max88W
PackagingTube
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU8796
FDU8796



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